2N4401SC

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to the 2N4403SC MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC * Tj 75 40 6 600 350 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mW 2N4401SC EPITAXIAL PLANAR NPN TRANSISTOR A G D E L BL 23 1 M DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 1. EMITTER 2. BASE 3. COLLECTOR SOT-23(1) C N K J Marking ZUCType Name Lot No. 2015. 5. 12 Revision No : 0 1/3 2N4401SC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain * Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency * * ICEX ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) VBE(sat) fT * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. TEST CONDITION VCE=60V, VEB=-3V VCB=60V, IE=0 VEB=3V, IC=0 IC=100 A, IE=0 IC=1mA, IB=0 IE=100 A, IC=0 VCE=10V, IC=150mA IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=20V, IC=20mA, f=100MHz MIN. 75 ...