2N3904SC

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 2N3904SC EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Complementary to 2N3906SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 6 Collector Current IC 200 Base Current IB 50 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * PC : Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mA mW 2015. 5. 12 Revision No : 0 1/3 2N3904SC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Transition Frequency ICEX ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) VBE(sat) fT VCE=30V, VEB=3V VCB=30V, IE=0 VEB=3V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCE=1V, IC=10mA IC=50mA, IB=5mA IC=50mA, IB=5mA VCE=20V, IC=10mA, f=100MHz Delay Time td Switching Time Rise Time Storage Time tr tstg Fall Time tf * Pulse Test : Pulse Width 300 S, Duty Cycle 2...