CNA1007H

Transmissive Photosensors (Photo Interrupters) CNA1007H Photo Interrupter Unit : mm www.DataSheet4U.com For contactless SW, object detection Overview CNA1007H is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. (3.2) 14.0 5.0±0.15 A 6.0 5.0 1.5±0.15 Device Center (C1) 3.5±0.5 10.0 2.5 1.3 A' (10.0) 1.8 3 (4-0.45) 1.65 Features Position detection accuracy : 0.3 mm Gap width : 5 mm Horizontal slit type The type directly attached to PCB ( with a positioning pins) +0 φ1.2 –0.1 2 1 4 Absolute Maximum Ratings (Ta = 25˚C) Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Reverse voltage (DC) Symbol Ratings VR IF PD*1 IC 5 50 75 20 30 5 100 – 40 to +100 Unit V mA mW mA V V mW ˚C ˚C Internal connector 2 3 1 Pin connection Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature *1 PC*2 Tstg Operating ambient temperature Storage temperature Topr –25 to +85 Input power derating ratio is 1.0 mW/˚C at Ta = 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta = 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Input characteristics Reverse current (DC) Forward voltage (DC) Symbol V...