KTB1424

SEMICONDUCTOR TECHNICAL DATA KTB1424 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES High DC Current Gain : hFE=3000(Min.) (VCE=-2V, IC=-1A) Complementary to KTD2424. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -80 -60 -10 -3 -0.5 25 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2 L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 N 2.54 +_ 0.1 P 6.8+_ 0.1 Q 4.5 +_ 0.2 R 2.6 +_0.2 HS 0.5 Typ 123 Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO Collector-Emitter Breakdown Voltage V(BR)CEO DC Current Gain hFE(1) hFE(2) Saturation Voltage Collector-Emitter Base-Emitter VCE(sat) VBE(sat) TEST CONDITION VCB=-80V, IE=0 VEB=-10V, IC=0 IC=-10mA, IB=0 VCE=-2V, IC=-1A VCE=-2V, IC=-3A IC=-3A, IB=-30mA IC=-3A, IB=-30mA MIN. -60 3000 1000 - TYP. - MAX. -20 -100 -1.5 -2.8 UNIT A A V V 2007. 5. 21 Revision No : 2 1/1 ...