KTK951S

SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY / HIGH FREQUENCY AMPLIFIER APPLICATION FEATURES Low Gain Controlled Amplifier High Transter Admittance Maximum Ratings (Ta=25 ) CHARACTERISTIC Gate-Drain Voltage Gate-Source Voltage Gate Current Drain Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDO VGSO IG ID PD Tj Tstg RATING -22 -22 10 50 150 150 -55~150 UNIT V V mA mA mW A G H D KTK951S N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR E L BL 23 1 PP M 1. SOURCE 2. DRAIN 3. GATE DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 SOT-23 C N K J Marking IDSS Rank Type Name J Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITIONS Gate-Source Breakdown Voltage Gate-Source Cut-off Voltage Gate Leakage Currnet Drain Current Forward Transfer Admittance V(BR)GSS VGS(OFF) IGSS IDSS(Note) yfs VDS=0V, IG=-10 VDS=5V, ID=10 VDS=0V, VGS=-15V VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz Note : IDSS Classification C : 12~22, D : 18~30, E : 27~40 2009. 5. 15 Revision No : 0 MIN TYP MAX UNIT -22 - -V 0 - -2.5 V - - 10 A 12 - 40 mA 20 30 - mS - 9 - pF 1/3 DRAIN CURRENT ID (mA) KTK951S ID - VDS 20 VGS=0V 16 -0.1V -0.2V 12 -0.3V -0.4V 8 -0.5V -0.6V -0.7V 4 0 0 2 4 6 8 10 12 DRAIN - SOURCE VOLTAGE VDS (V) 35 VDS=5V 30 25 20 15 10 5 0 ...