Document
SEMICONDUCTOR
TECHNICAL DATA
MMBTA92/93
EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.
FEATURES Complementary to MMBTA42/43.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
MMBTA92 MMBTA93
VCBO
-300 -200
Collector-Emitter Voltage
MMBTA92 MMBTA93
VCEO
-300 -200
Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature
VEBO IC IE PC * Tj Tstg
-5.0 -500 500 350 150 -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT
V
V V mA mA mW
Q
Marking
YVType Name
C N K J
A G H
D
E L BL
23 1
PP
M
DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 P7 Q 0.1 MAX
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23
Lot No.
YWType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
MMBTA92 MMBTA93
V(BR)CBO
Collector-Emitter Breakdown Voltage
MMBTA92 MMBTA93
V(BE)CEO
Collector Cut-off Current
MMBTA92 MMBTA93
ICBO
DC Current Gain
* hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
MMBTA92 MMBTA93
* VCE(sat) * VBE(sat)
fT
Cob
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
MMBTA92
TEST CONDITION
IC=-100 A, IE=0
IC=-1.0mA, IB=0
VCB=-300, IE=0 VCB=-200, IE=0 IC=-1.0mA, VCE=-10V IC=-10mA, VCE=-10V IC=-30mA, VCE=-10V IC=-20mA, IB=-2.0mA IC=-20mA, IB=-2.0mA VCE=-20V, IC=-10mA, f=100MHz
VCB=-20V, IE=0, f=1MHz
MIN. -300 -200 -300 -200
25 40 25 50 -
MMBTA93
TYP. -
MAX. -
-250 -250
-0.5 -0.9 6.0 8.0
UNIT V V nA
V V MHz pF
2014. 10. 24
Revision No : 2
1/2
COLLECTOR OUTPUT CAPACITANCE C ob (pF)
MMBTA92/93
Cob - V R
100 50
C ib 30
10
5 3
1 -0.1 -0.3 -1
Cob -3 -10 -30 -100 -300 -1k
REVERSE VOLTAGE VR (V)
TRANSITION FREQUENCY fT (MHz)
fT - IC
100
50 30
T j =25 C
VCE =20V
0 -1 -3 -5
-10
-30 -50 -100
COLLECTOR CURRENT IC (mA)
-1.0 -0.8 -0.6 -0.4 -0.2
0 -1
VBE(sat) , VCE(sat) - I C
VBE(sat)
I C /IB =10
VCE(sat)
-3 -5 -10
-30 -50 -100
COLLECTOR CURRENT I C (mA)
DC CURRENT GAIN hFE
h FE - I C
300 VCE =10V
T j =125 C 100 T j =25 C
T j =-55 C 50
30
10
-1
-3 -5 -10
-30 -50 -100
COLLECTOR CURRENT IC (mA)
SATURATION VOLTAGE VBE(sat), VCE(sat) (V)
2014. 10. 24
Revision No : 2
2/2
.