MMBTA63

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage MMBTA63/64 VCBO MMBTA63/64 VCES -30 -30 Emitter-Base Voltage Collector Current DC Pulse VEBO IC ICP -10 -500 -1 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Package Mounted On 99.5% Alumina 10 8 0.6mm. UNIT V V V mA A mW MMBTA63/64 EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current V(BR)CES ICBO IEBO IC=-0.1mA, IB=0 VCB=-30V, IE=0 VEB=-10V, IC=0 DC Current Gain MMBTA63 MMBTA64 MMBTA63 MMBTA64 hFE(1) IC=-10mA, VCE=-5V hFE(2) IC=-100mA, VCE=-5V Collector-Emitter Saturation Voltage Base Emitter Voltage MMBTA63/64 MMBTA63/64 VCE(sat) VBE Current Gain Bandwith Product MMBTA63/64 fT *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% IC=-100mA, IB=-0.1mA IC=-100mA, VCE=-5V IC=-10mA, f=100MHz VCE=-5V MARK SPEC TYPE MARK MMBTA63 AGX MMBTA64 AFX Marking A XType Name MIN. -30 5,000 10,00...