MMBTA517

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation VCBO VCEO VEBO IC PC * 40 30 10 400 350 Junction Temperature Tj 150 Storage Temperature Tstg -55 150 * : Package Mounted On 99.5% Alumina 10 8 0.6mm. UNIT V V V mA mW MMBTA517 EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Collector Output Capacitance Cob TEST CONDITION IC=0.1mA IC=10mA IE=-1.0mA VCB=40V VEB=10V IC=100mA, VCE=2V IC=100mA, IB=1mA IC=100mA, IB=10mA IC=100mA, f=100MHz, VCE=2V VCB=10V, f=1MHz MIN. 40 30 10 30K - TYP. 1.5 220 5 MAX. 1 1 1 2 - UNIT V V V A A V V MHz pF 1999. 11. 30 Revision No : 3 1/2 MMBTA517 1999. 11. 30 Revision No : 3 2/2 ...