MMBTA42

SEMICONDUCTOR TECHNICAL DATA MMBTA42/43 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES Complementary to MMBTA92/93. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage MMBTA42 MMBTA43 VCBO 300 200 Collector-Emitter Voltage MMBTA42 MMBTA43 VCEO 300 200 Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature VEBO IC IE PC * Tj Tstg 5.0 500 -500 350 150 -55 150 * : Package Mounted On 99.5% Alumina 10 8 0.6mm. UNIT V V V mA mA mW Marking AAXType Name E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Lot No. ABXType Name Lot No. MMBTA42 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage MMBTA42 MMBTA43 V(BR)CBO Collector-Emitter Breakdown Voltage MMBTA42 MMBTA43 V(BE)CEO DC Current Gain * hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency VCE(sat) VBE(sat) fT Collector Output Capacitance MMBTA42 MMBTA43 Cob *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% TEST CONDITION IC=100 A, IE=0 IC=1.0mA, IB=0 IC=1.0mA, VCE=10V IC=10mA, VCE=10V IC=30mA, VCE=10V IC=20mA, IB=2.0mA IC=20mA, IB=2.0mA VCE=20V, IC...