MMBTA13

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collertor Current VCBO VCES VEBO IC 30 30 10 500 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Package Mounted On 99.5% Alumina 10 8 0.6mm. UNIT V V V mA mW MMBTA13/14 EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage Emitter Cut-off Current Emitter Cut-off Current MMBTA13 DC Current Gain MMBTA14 MMBTA13 VCES ICBO IEBO hFE * MMBTA14 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Current Gain Bandwith Product fT *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% TEST CONDITION IC=0.1mA VCB=30V VEB=10V IC=10mA, VCE=5V IC=100mA, VCE=5V IC=100mA, IB=0.1mA IC=100mA, VCE=5V IC=10mA, f=100MHz, VCE=5V MIN. 30 - 5,000 10,000 10,000 20,000 125 TYP. - MAX. - 100 100 1.5 2.0 - UNIT V nA nA - V V MHz MARK SPEC TYPE MARK MMBTA13 AIX MMBTA14 AHX Marking A XType Name Lot No. 1999. 11. 30 Revision No : 4 1/2 DC...