Document
SEMICONDUCTOR
TECHNICAL DATA
BC859/860
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
For Complementary with NPN Type BC849/850
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
BC859 BC860
VCBO
-30 -50
Collector-Emitter Voltage
BC859 BC860
VCEO
-30 -45
Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VEBO IC PC * Tj Tstg
-5 -100 350 150 -55 150
PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT V
V V mA mW
Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector-Emitter Breakdown Voltage
BC859 BC860
V(BR)CEO IC=-10mA, IB=0
Collector-Base Breakdown Voltage
BC859 BC860
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency Collector Output Capacitance Noise Figure
V(BR)CBO
V(BR)EBO ICBO hFE
VBE(ON) 1 VBE(ON) 2 VCE(sat) 1 VCE(sat) 2 VBE(sat) 1 VBE(sat) 2
fT Cob
NF
Note : hFE Classification A:125 250, B:220 475
IC=-10 A, IE=0
IE=-10 A, IC=0 VCB=-30V, IE=0 IC=-2mA, VCE=-5V IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, IE=0, f=1MHz IC=-200 A, VCE=-5V Rg=10k , f=1kHz
Marking
MARK SPEC
TYPE MARK
BC859A 4A
BC859B 4B
BC860A 4E
BC860B 4G
Type Name
C N K J
A G H
D
E L BL
23 1
PP
M
DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 P7 Q 0.1 MAX
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23
MIN. -30 -45 -30 -50 -5 125 -0.6 -
TYP. -
-0.65 -
-0.075 -0.25 -0.7 -0.85 150 4.5
MAX. -15
475 -0.75 -0.82 -0.3 -0.65
-
-
UNIT V
V V nA
V
V
V MHz pF
- - 4.0 dB
Lot No.
1998. 6. 15
Revision No : 2
1/2
BC859/860
1998. 6. 15
Revision No : 2
2/2
.