BC847W

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES High Voltage : BC846W VCEO=65V. For Complementary With PNP Type BC856W/857W/858W. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage BC846W BC847W BC848W VCBO Collector-Emitter Voltage BC846W BC847W BC848W VCEO BC846W Emitter-Base Voltage BC847W BC848W Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VEBO IC IE PC Tj Tstg RATING 80 50 30 65 45 30 6 6 5 100 -100 100 150 -55 150 UNIT V V V mA mA mW BC846W/7W/8W EPITAXIAL PLANAR NPN TRANSISTOR A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. EMITTER 2. BASE 3. COLLECTOR USM Marking Type Name Lot No. MARK SPEC TYPE BC846W-A MARK 1A BC846W-B 1B BC847W-A 1E BC847W-B 1F BC847W-C 1G BC848W-A 1J BC848W-B 1K BC848W-C 1L 2008. 8. 29 Revision No : 4 1/3 BC846W/7W/8W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current DC Current Gain (Note) BC846W BC847W BC848W Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Noise Figure ICBO VCB=30V, IE=0 hFE VCE=5V, IC=2mA VCE(sat) 1 VCE(sat) 2 VBE(sat) 1 VBE(sat) 2 VBE(ON)...