TIP35C

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. Complementary to TIP36C. Icmax:25A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 100 100 5 25 5.0 125 150 -55 150 UNIT V V V A A W E TIP35C TRIPLE DIFFUSED NPN TRANSISTOR AQ B K F I J GH C D d PP L T 1 23 1. BASE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS A 15.9 MAX B 4.8 MAX C 20.0+_ 0.3 D 2.0+_ 0.3 d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX H 9.0 I 4.5 MJ 2.0 K 1.8 MAX L 20.5+_ 0.5 M 2.8 P 5.45+_ 0.2 Q Φ3.2+_ 0.2 T 0.6+0.3/-0.1 TO-3P(N) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat)(1) VCE(sat)(2) VBE Transition Frequency fT Note : hFE(1) Classification R:55~110, O:80~160 TEST CONDITION VCB=100V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 VCE=5V, IC=1.5A VCE=4V, IC=15A IC=15A, IB=1.5A IC=25A, IB=5.0A VCE=5V, IC=5A VCE=5V, IC=1A MIN. - 100 55 15 3.0 TYP. - MAX. 10 10 160 1.8 4.0 1.5 - UNIT A A V V V MHz 2001. 1. 18 Revision No : 3 1/2 TIP35C 2001. 1. 18 Revision No : 3 2/2...