Document
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
2N3904
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25 Tc=25
*PC
Junction Temperature
Storage Temperature Range
*Cu Lead-Frame : 625mW(@Ta=25 ) 1.5W(@Tc=25 )
Fe Lead-Frame : 400mW(@Ta=25 ) 1.0W(@Tc=25 )
Tj Tstg
RATING 60 40 6 200 50 625 400 1.5 1.0 150
-55 150
UNIT V V V mA mA
mW
W
2013. 7. 08
Revision No : 2
1/4
2N3904
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance
Noise Figure
*
ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe
NF
VCE=30V, VEB=3V VCE=30V, VEB=3V IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1MHz VBE=0.5V, IC=0, f=1MHz
VCE=10V, IC=1mA, f=1kHz
VCE=5V, IC=0.1mA Rg=1k , f=10Hz 15.7kHz
Delay Time
td
Switching Time
Rise Time Storage Time
tr tstg
Fall Time
tf
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
MIN. 60 40 6.0 40 70
100 60 30 0.65 300 1.0 0.5 100 1.0
TYP. -
MAX. 50 50 300 0.2 0.3 0.85 0.95 4.0 8.0 10 8.0 400 40
UNIT nA nA V V V
V
V MHz pF pF k x10-4
- - 5.0 dB
- - 35
- - 35 nS
- - 200
- - 50
2013. 7. 08
Revision No : 2
2/4
2N3904
2013. 7. 08
Revision No : 2
3/4
2N3904
2013. 7. 08
Revision No : 2
4/4
.