KP8N60I

SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ.)= 16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VDSS VGSS ID IDP EAS EAR dv/dt PD 600 30 8 5 18* 125 3.7 4.5 73.5 0.59 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 1.7 110 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION D KP8N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KP8N60D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 123 O 1. GATE 2. DRAIN 3. SOURCE DPAK (1) KP8N60I AH CJ BD M N G FF 123 K E P L 1. GATE 2. DRAIN 3. SOURC...