KML0D4P20E

SEMICONDUCTOR TECHNICAL DATA General Description It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS= -20V, ID= -0.35A Drain-Soure ON Resistance : RDS(ON)=1.2 @ VGS= -4.5V : RDS(ON)=1.6 @ VGS= -2.5V : RDS(ON)=2.7 @ VGS= -1.8V ESD Protection diode. KML0D4P20E P-Ch Trench MOSFET MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL P-Ch UNIT Drain-Source Voltage Gate-Source Voltage VDSS -20 V VGSS 6V Drain Current DC @TA=25 DC @TA=85 Pulsed (Note 1) (Note 1) (Note 1) ID IDP -350 -255 -1400 mA Drain Power Dissipation (Note 2) PD 210 mW Maximum Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 Thermal Resistance, Junction to Ambient (Note 2) RthJA Note 1) Drain current limited by maximum junction temperature Note 2) Surface Mounted on 1 1 FR4 Board 600 /W 2015. 1. 15 Revision No : 2 1/4 KML0D4P20E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Static SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Source-Drain Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS IDSS IGSS Vth RDS(ON) gfs VSD Qg QgS Qgd td(on) tr td(off) tf Ciss Coss Crss ID= -250 A, VGS=0V VGS=0V, VDS= -16V VGS=...