KMD7D5P40QA

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for battery protection circuit. FEATURES VDSS=-40V, ID=-7.5A. Drain-Source ON Resistance. RDS(ON)=30m (Max.) @ VGS=-10V RDS(ON)=37m (Max.) @ VGS=-4.5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage Gate Source Voltage Drain Current DC@Ta=25 Pulsed Drain Source Diode Forward Current Drain Power Dissipation DC@Ta=25 Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID* IDP IS PD* Tj Tstg -40 20 -7.5 -30 -30 2.0 150 -55~150 V V A A A W Thermal Resistance, Junction to Ambient RthJA* 62.5 /W Note : *Surface Mounted on 1” 1” FR4 Board, t 10sec PIN CONNECTION (TOP VIEW) S1 S2 S3 G4 8D 7D 6D 5D 1 2 3 4 8 7 6 5 KMD7D5P40QA P-Ch Trench MOSFET DP H T G L A 85 DIM A B1 B2 D MILLIMETERS 4.85 +_ 0.2 3.94 +_ 0.2 6.02+_ 0.3 0.4 +_ 0.1 B1 B2 G 0.15+0.1/-0.05 H 1.63 +_ 0.2 14 L 0.65 +_ 0.2 P 1.27 T 0.20+0.1/-0.05 FLP-8 KMD7D5P 40QA 2008. 9. 17 Revision No : 1 1/4 KMD7D5P40QA ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance BVDSS IDSS IGSS V...