KMD6D0DN40Q

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. FEATURES VDSS=40V, ID=6A. Drain-Source ON Resistance. RDS(ON)=38m (Max.) @VGS=10V RDS(ON)=50m (Max.) @VGS=4.5V Super High Dense Cell Design Very fast switching MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain Source Voltage Gate Source Voltage Drain Current Ta=25 Pulsed(Note1) Peak Diode Recovery dv/dt (Note 2) VDSS VGSS ID * IDP dv/dt 40 V 12 V 6A 24 A 4.5 V/ns Peak Diode Recovery di/dt di/dt 200 A/us Single pulsed Avalanche Energy (Note 3) Repetitive Avalanche Energy (Note 1) Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient EAS EAR Tj Tstg RthJA* 66 2.7 -50~150 -50~150 62.5 mJ mJ /W * : Surface Mounted on FR4 Board (25mm 25mm, 1.5t, t 10sec) KMD6D0DN40Q Dual N-Ch Trench MOSFET DP H T G L A DIM MILLIMETERS A 4.85 +_ 0.2 B1 3.94 +_ 0.2 85 B2 6.02+_ 0.3 D 0.4 +_ 0.1 B1 B2 G 0.15+0.1/-0.05 H 1.63 +_ 0.2 14 L 0.65 +_ 0.2 P 1.27 T 0.20+0.1/-0.05 FLP-8 Marking Type Name KMD6D0DN 40Q 101 Lot No. PIN CONNECTION (TOP VIEW) S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 1 2 3 4 8 7 6 5 2012. 7. 26 Revision No : 0 1/5 KMD6D0DN40Q ELECTRICAL CHARACTERISTICS (Tj=25 ) UNLESS OTHERWISE NOTED CHARACTERISTIC Static SYMBOL TEST...