KMB8D0P30QA

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Load Switch and Battery pack. FEATURES VDSS=-30V, ID=-8A. Drain to Source On Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=35m (Max.) @ VGS=-4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current DC@Ta=25 (Note 1) Pulsed Drain Power Dissipation @Ta=25 Maximum Junction Temperature (Note 1) Storage Temperature Range VDSS VGSS ID IDP PD Tj Tstg 30 20 -8 -40 2.5 150 -55~150 V V A A W Thermal Resistance, Junction to Ambient (Note 1) RthJA 50 /W Note1) Surface Mounted on 1 1 FR4 Board, t 10sec. KMB8D0P30QA P-Ch Trench MOSFET DP H T G L A 85 DIM A B1 B2 D MILLIMETERS 4.85 +_ 0.2 3.94 +_ 0.2 6.02+_ 0.3 0.4 +_ 0.1 B1 B2 G 0.15+0.1/-0.05 H 1.63 +_ 0.2 14 L 0.65 +_ 0.2 P 1.27 T 0.20+0.1/-0.05 FLP-8 KMB8D0P 30QA PIN CONNECTION (TOP VIEW) S1 S2 S3 G4 8D 7D 6D 5D 1 2 3 4 8 7 6 5 2009. 6. 15 Revision No : 0 1/4 KMB8D0P30QA ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED CHARACTERISTIC SYMBOL TEST CONDITION Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance Dynamic BVDSS IDSS IGS...