Document
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for load switch and Back light inverter.
FEATURES VDSS=60V, ID=4.5A. Drain-Source ON Resistance. RDS(ON)=56m (Max.) @ VGS=10V RDS(ON)=77m (Max.) @ VGS=4.5V
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
DC@Ta=25 Pulsed
Drain Source Diode Forward Current
Drain Power Dissipation @Ta=25 Maximum Junction Temperature
Storage Temperature Range
VDSS VGSS ID* IDP
IS PD* Tj Tstg
60 20 4.5 20 3 2 150 -55~150
V V A A A W
Thermal Resistance, Junction to Ambient
RthJA*
62.5
/W
Note> *Surface Mounted on 1” 1” FR4 Board, t 10sec.
KMB4D5DN60QA
Dual N-Ch Trench MOSFET
DP
H T
G
L
A 85
DIM A B1 B2 D
MILLIMETERS 4.85 +_ 0.2 3.94 +_ 0.2 6.02+_ 0.3 0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H 1.63 +_ 0.2
14
L 0.65 +_ 0.2
P 1.27
T 0.20+0.1/-0.05
FLP-8
KMB4D5DN 60QA
PIN CONNECTION (TOP VIEW)
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
1 2 3 4
8 7 6 5
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KMB4D5DN60QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage
Drain-Source ON Resistance
Forward Transconductance Dynamic
BVDSS IDSS IGSS Vth
RDS(ON)*
gfs*
VGS=0V, IDS=250 A VGS=0V, VDS=48V VGS= 20V, VDS=0V VDS=VGS, ID=250 A VGS=10V, ID=4.5A VGS=4.5V, ID=3A VDS=5V, ID=4.5A
Input Capaclitance
Ouput Capacitance
Reverse Transfer Capacitance
Total Gate Charge Gate-Source Charge
VGS=10V VGS=4.5V
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings
Ciss* Coss* Crss*
Qg*
Qgs* Qgd* td(on)* tr* td(off)* tf*
VDS=30V, VGS=0V, f=1MHz
VDS=30V, VGS=10V, ID=4.5A
VDS=30V, VGS=10V ID=4.5 , RG=3
Source-Drain Forward Voltage
VSDF*
VGS=0V, IS=1A
Note> *Pulse Test : Pulse Width 300 , Duty Cycle 2%
MIN. TYP. MAX. UNIT
60 - - V
--1 A
- - 100 nA
1.0 - 3.0 V
- 46 56 m
- 64 77
- 11 -
S
- 490 - 45 - 25 - 10.4 - 5.1 - 2.3 - 2.2 - 12.4 - 34.5 - 30.7 - 5.0 -
pF nC ns
-
0.7 1.0
V
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KMB4D5DN60QA
Drain Current ID (A)
Fig1. ID - VDS
20 VGS=10V
15
VGS=5.0V 10
VGS=4.5V
VGS=4.0V
5 VGS=3.5V
0 012345
Drain - Source Voltage VDS (V)
20 VDS=5V
15
Fig3. ID - VGS
10
5
125 C
25 C
0 012345
Gate Source Voltage VGS (V)
Drain Current ID (A)
Gate Threshold Voltage Vth (V)
Fig5. Vth - Tj
5 VGS=VDS ID=250µA
4
3
2
1
0 -75 -50 -25 0 25 50 75 100 125 150
Junction Temperature Tj ( C)
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Drain Current IS (A)
Drain-SourceOn-Resistance RDS(ON) (mΩ)
On-Resistance RDS(ON) (mΩ)
Fig2. RDS(ON) - ID
100 Ta=25 C
90 80
VGS=4.5V 70 60 50 40 VGS=10V 30 20
0 5 10 15
Drain Current ID (A)
20
Fig4. RDS(on) - Tj
150 VGS=10V, ID=4.5A
120
90
60
30
0 -75 -50 -25 0 25 50 75 100 125 150
Junction Temperature Tj ( C)
Fig 6. IS - VSDF
100
10 125 C 25 C
1
0.1
0.01
0.001 0
0.2 0.4 0.6 0.8 1.0 1.2
Source-Drain Forward Voltage VSDF (V)
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KMB4D5DN60QA
Gate to Source Voltage VGS (V) Drain Current ID (A)
Capacitance C (pF)
Fig7. VGS - Qg
10 VDS=30V
8 ID=4.5A
6
4
2
0 02468
10 12
Fig8. C - VDS
800 600
Ciss
f=1MHz
400
200
Coss
0 Crss 0 10 20 30 40
Gate Charge Qg (nC)
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
102 Operation in this area is limited by RDS(ON)
101
200µs
100 1ms
10ms
10-1 100ms
1s
10s
VGS= 10V
DC
10-2 SINGLE PULSE
10-2 10-1 100 101 102
Drain - Source Voltage VDS (V)
103
Normalized Transient Thermal Resistance
100
Duty Cycle = 0.5
0.2 10-1
0.1 0.05
10-2 0.02
Single Pulse
10-3 10-4
10-3
Fig9. Transient Thermal Response Curve
PDM
t1 t2
1. 2.
Duty Cycle, D = Per Unit Base =
t1 RthJAt2=
62.5
C/W
10-2 10-1 100 101 102 103
Square Wave Pulse Duration tw (sec)
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