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KMB4D5DN60QA Dataheets PDF



Part Number KMB4D5DN60QA
Manufacturers KEC
Logo KEC
Description Dual N-Channel MOSFET
Datasheet KMB4D5DN60QA DatasheetKMB4D5DN60QA Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for load switch and Back light inverter. FEATURES VDSS=60V, ID=4.5A. Drain-Source ON Resistance. RDS(ON)=56m (Max.) @ VGS=10V RDS(ON)=77m (Max.) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage Gate .

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SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for load switch and Back light inverter. FEATURES VDSS=60V, ID=4.5A. Drain-Source ON Resistance. RDS(ON)=56m (Max.) @ VGS=10V RDS(ON)=77m (Max.) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage Gate Source Voltage Drain Current DC@Ta=25 Pulsed Drain Source Diode Forward Current Drain Power Dissipation @Ta=25 Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID* IDP IS PD* Tj Tstg 60 20 4.5 20 3 2 150 -55~150 V V A A A W Thermal Resistance, Junction to Ambient RthJA* 62.5 /W Note> *Surface Mounted on 1” 1” FR4 Board, t 10sec. KMB4D5DN60QA Dual N-Ch Trench MOSFET DP H T G L A 85 DIM A B1 B2 D MILLIMETERS 4.85 +_ 0.2 3.94 +_ 0.2 6.02+_ 0.3 0.4 +_ 0.1 B1 B2 G 0.15+0.1/-0.05 H 1.63 +_ 0.2 14 L 0.65 +_ 0.2 P 1.27 T 0.20+0.1/-0.05 FLP-8 KMB4D5DN 60QA PIN CONNECTION (TOP VIEW) S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 1 2 3 4 8 7 6 5 2008. 5. 27 Revision No : 0 1/4 KMB4D5DN60QA ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Dynamic BVDSS IDSS IGSS Vth RDS(ON)* gfs* VGS=0V, IDS=250 A VGS=0V, VDS=48V VGS= 20V, VDS=0V VDS=VGS, ID=250 A VGS=10V, ID=4.5A VGS=4.5V, ID=3A VDS=5V, ID=4.5A Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge VGS=10V VGS=4.5V Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings Ciss* Coss* Crss* Qg* Qgs* Qgd* td(on)* tr* td(off)* tf* VDS=30V, VGS=0V, f=1MHz VDS=30V, VGS=10V, ID=4.5A VDS=30V, VGS=10V ID=4.5 , RG=3 Source-Drain Forward Voltage VSDF* VGS=0V, IS=1A Note> *Pulse Test : Pulse Width 300 , Duty Cycle 2% MIN. TYP. MAX. UNIT 60 - - V --1 A - - 100 nA 1.0 - 3.0 V - 46 56 m - 64 77 - 11 - S - 490 - 45 - 25 - 10.4 - 5.1 - 2.3 - 2.2 - 12.4 - 34.5 - 30.7 - 5.0 - pF nC ns - 0.7 1.0 V 2008. 5. 27 Revision No : 0 2/4 KMB4D5DN60QA Drain Current ID (A) Fig1. ID - VDS 20 VGS=10V 15 VGS=5.0V 10 VGS=4.5V VGS=4.0V 5 VGS=3.5V 0 012345 Drain - Source Voltage VDS (V) 20 VDS=5V 15 Fig3. ID - VGS 10 5 125 C 25 C 0 012345 Gate Source Voltage VGS (V) Drain Current ID (A) Gate Threshold Voltage Vth (V) Fig5. Vth - Tj 5 VGS=VDS ID=250µA 4 3 2 1 0 -75 -50 -25 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2008. 5. 27 Revision No : 0 Drain Current IS (A) Drain-SourceOn-Resistance RDS(ON) (mΩ) On-Resistance RDS(ON) (mΩ) Fig2. RDS(ON) - ID 100 Ta=25 C 90 80 VGS=4.5V 70 60 50 40 VGS=10V 30 20 0 5 10 15 Drain Current ID (A) 20 Fig4. RDS(on) - Tj 150 VGS=10V, ID=4.5A 120 90 60 30 0 -75 -50 -25 0 25 50 75 100 125 150 Junction Temperature Tj ( C) Fig 6. IS - VSDF 100 10 125 C 25 C 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 Source-Drain Forward Voltage VSDF (V) 3/4 KMB4D5DN60QA Gate to Source Voltage VGS (V) Drain Current ID (A) Capacitance C (pF) Fig7. VGS - Qg 10 VDS=30V 8 ID=4.5A 6 4 2 0 02468 10 12 Fig8. C - VDS 800 600 Ciss f=1MHz 400 200 Coss 0 Crss 0 10 20 30 40 Gate Charge Qg (nC) Drain - Source Voltage VDS (V) Fig9. Safe Operation Area 102 Operation in this area is limited by RDS(ON) 101 200µs 100 1ms 10ms 10-1 100ms 1s 10s VGS= 10V DC 10-2 SINGLE PULSE 10-2 10-1 100 101 102 Drain - Source Voltage VDS (V) 103 Normalized Transient Thermal Resistance 100 Duty Cycle = 0.5 0.2 10-1 0.1 0.05 10-2 0.02 Single Pulse 10-3 10-4 10-3 Fig9. Transient Thermal Response Curve PDM t1 t2 1. 2. Duty Cycle, D = Per Unit Base = t1 RthJAt2= 62.5 C/W 10-2 10-1 100 101 102 103 Square Wave Pulse Duration tw (sec) 2008. 5. 27 Revision No : 0 4/4 .


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