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7MBR50SB140 Dataheets PDF



Part Number 7MBR50SB140
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 7MBR50SB140 Datasheet7MBR50SB140 Datasheet (PDF)

7MBR50SB140 IGBT MODULE (S series) 1400V / 50A / PIM IGBT Modules Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICP Inverter Collecto.

  7MBR50SB140   7MBR50SB140


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7MBR50SB140 IGBT MODULE (S series) 1400V / 50A / PIM IGBT Modules Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICP Inverter Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current -IC PC VCES VGES IC Brake ICP Converter Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque PC VRRM VRRM IO IFSM I2t Tj Tstg Viso Condition Continuous 1ms Tc=25°C Tc=75°C Tc=25°C Tc=75°C 1 device Continuous 1ms 1 device Tc=25°C Tc=75°C Tc=25°C Tc=75°C 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. Rating 1400 ±20 75 50 150 100 50 360 1400 ±20 35 25 70 50 180 1400 1600 50 520 1352 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A A A W V V A A W V V A A A2s °C °C V N·m IGBT Module 7MBR50SB140 Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Condition Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B VCE=1400V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=50mA VGE=15V, Ic=50A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=800V IC=50A VGE=±15V RG=24Ω IF=50A chip terminal IF=50A VCES=1400V, VGE=0V VCE=0V, VGE=±20V IC=25A, VGE=15V chip terminal VCC=800V IC=25A VGE=±15V RG=51Ω VR=1400V IF=50A chip terminal VR=1600V T=25°C T=100°C T=25/50°C Brake Converter Characteristics Min. Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.2 2.4 2.8 6000 0.35 1.2 0.25 0.6 0.1 0.45 1.0 0.08 0.3 2.4 2.6 3.4 0.35 1.0 0.2 2.2 2.35 2.8 0.35 1.2 0.25 0.6 0.45 1.0 0.08 0.3 1.0 1.1 1.2 1.5 1.0 5000 465 495 520 3305 3375 3450 Unit mA µA V V pF µs V µs mA µA V µs mA V mA Ω K Thermal resistance Characteristics Item Symbol Condition Inverter IGBT Thermal resistance ( 1 device ) Rth(j-c) Inverter FWD Brake IGBT Converter Diode Contact thermal resistance * Rth(c-f) With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic Min. Characteristics Typ. Max. 0.35 0.75 0.69 0.50 0.05 Unit °C/W [Converter] 1(R) 2(S) 3(T) 21(P) [Brake] 22(P1) 20(Gu) [Inverter] 18(Gv) 16(Gw) [Thermistor] 89 7(B) 19(Eu) 17(Ev) 4(U) 15(Ew) 5(V) 6(W) 23(N) 14(Gb) 24(N1) 13(Gx) 12(Gy) 11(Gz) 10(En) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 120 100 VGE= 20V15V12V Collector current : Ic [ A ] 80 10V 60 40 20 8V 0 012345 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 120 Tj= 25°C Tj= 125°C 100 Collector current : Ic [ A ] 80 60 40 20 0 012345 Collector - Emitter voltage : VCE [ V ] 20000 10000 [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Cies Capacitance : Cies, Coes, Cres [ pF ] 1000 Coes Cres 100 0 5 10 15 20 25 30 Collector - Emitter voltage : VCE [ V ] 35 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ] 7MBR50SB140 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 120 100 VGE= 20V 15V 12V 80 10V 60 40 20 8V 0 012345 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 10 8 6 4 2 0 5 1000 Ic= 100A Ic= 50A Ic= 25A 10 15 20 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=50A, Tj= 25°C 25 25 800 20 600 15 400 10 200 5 00 0 100 200 300 400 500 Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module 7MBR50SB140 Switching time : ton, t.


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