Document
7MBR50SB140
IGBT MODULE (S series) 1400V / 50A / PIM
IGBT Modules
Features
· Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage
Collector current
Symbol VCES VGES IC
ICP
Inverter
Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current
-IC PC VCES VGES IC
Brake
ICP
Converter
Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
PC VRRM VRRM IO IFSM I2t Tj Tstg Viso
Condition
Continuous 1ms
Tc=25°C Tc=75°C Tc=25°C Tc=75°C
1 device
Continuous 1ms 1 device
Tc=25°C Tc=75°C Tc=25°C Tc=75°C
50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
Rating 1400 ±20 75 50 150 100 50 360 1400 ±20 35 25 70 50 180 1400 1600 50 520 1352 +150
-40 to +125 AC 2500 AC 2500 3.5 *1
Unit V V A
A
A W V V A
A
W V V A A A2s °C °C V
N·m
IGBT Module
7MBR50SB140
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Inverter
Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
Input capacitance Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current Forward on voltage
Reverse current Resistance
B value
ICES IGES VGE(th) VCE(sat)
Cies ton tr tr(i) toff tf VF
trr ICES IGES VCE(sat)
ton tr toff tf IRRM VFM
IRRM R
B
VCE=1400V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=50mA VGE=15V, Ic=50A chip
terminal VGE=0V, VCE=10V, f=1MHz VCC=800V IC=50A VGE=±15V RG=24Ω
IF=50A
chip
terminal
IF=50A
VCES=1400V, VGE=0V
VCE=0V, VGE=±20V
IC=25A, VGE=15V chip
terminal
VCC=800V
IC=25A
VGE=±15V
RG=51Ω
VR=1400V
IF=50A
chip
terminal
VR=1600V
T=25°C
T=100°C
T=25/50°C
Brake
Converter
Characteristics
Min.
Typ.
Max.
1.0
0.2
5.5 7.2
8.5
2.2
2.4 2.8
6000
0.35 1.2
0.25 0.6
0.1
0.45 1.0
0.08
0.3
2.4
2.6 3.4
0.35
1.0
0.2
2.2
2.35
2.8
0.35 1.2
0.25 0.6
0.45 1.0
0.08 0.3
1.0
1.1
1.2 1.5
1.0
5000
465 495
520
3305
3375
3450
Unit mA µA V V
pF µs
V
µs mA µA V
µs
mA V
mA Ω K
Thermal resistance Characteristics Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FWD Brake IGBT
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
Min.
Characteristics
Typ.
Max.
0.35
0.75
0.69
0.50
0.05
Unit °C/W
[Converter] 1(R) 2(S) 3(T)
21(P)
[Brake] 22(P1)
20(Gu)
[Inverter]
18(Gv)
16(Gw)
[Thermistor] 89
7(B)
19(Eu)
17(Ev) 4(U)
15(Ew) 5(V)
6(W)
23(N)
14(Gb) 24(N1)
13(Gx)
12(Gy)
11(Gz)
10(En)
IGBT Module
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.) 120
100 VGE= 20V15V12V
Collector current : Ic [ A ]
80
10V 60
40
20
8V 0
012345 Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) 120
Tj= 25°C Tj= 125°C 100
Collector current : Ic [ A ]
80
60
40
20
0 012345
Collector - Emitter voltage : VCE [ V ]
20000 10000
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Cies
Capacitance : Cies, Coes, Cres [ pF ]
1000
Coes
Cres
100 0
5 10 15 20 25 30 Collector - Emitter voltage : VCE [ V ]
35
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
7MBR50SB140
[ Inverter ] Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.) 120
100 VGE= 20V 15V 12V
80 10V
60
40
20 8V
0 012345 Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.) 10
8
6
4 2 0
5
1000
Ic= 100A Ic= 50A Ic= 25A
10 15 20 Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=50A, Tj= 25°C
25 25
800 20
600 15
400 10
200 5
00 0 100 200 300 400 500
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
IGBT Module
7MBR50SB140
Switching time : ton, t.