Document
SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 1MBI300U4-120
Spec. No. :
MS5F 6163
June. 07 ’05 S.Miyashita June. 07 ’05 T.Miyasaka
K.Yamada
Y.Seki
MS5F6163
1 13
H04-004-07b
Revised Records
Date
Classification
Ind.
June.-07 -’05 Enactment
Content
Applied date
Drawn
Checked Checked Approved
Issued date
T.Miyasaka K.Yamada Y.Seki
MS5F6163
2 13
H04-004-06b
1. Outline Drawing ( Unit : mm )
1MBI300U4-120
2. Equivalent circuit
MS5F6163
3 13
H04-004-03a
3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified )
It em s
Symbols
Conditions
Collector-Emitter voltage Gate-Emitter voltage
VCES VGES
Ic
Continuous
Collector current
Icp 1ms
-Ic
-Ic pulse
1ms
Collector Power Dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
Viso
AC : 1min.
Screw Torque
Mounting (*2) Terminals (*3) Terminals (*4)
-
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
(*3) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
(*4) Recommendable Value : Terminals 1.3 to 1.7 Nm (M4)
Tc=25oC Tc=80oC Tc=25oC Tc=80oC
Max i m u m
Ratings 1200 ±20 400 300 800 600 300 600 1540 +150
-40 to +125
Units V V
A
W oC
2500
VAC
3.5 4.5 N m 1.7
4. Electrical characteristics ( at Tj= 25oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Characteristics min. typ. max.
Zero gate voltage collector current
ICES
VCE=1200V VGE=0V
- - 4.0
Gate-Emitter leakage current
IGES
VCE=0V VGE=±20V
- - 800
Gate-Emitter threshold voltage
VGE(th)
VCE=20V Ic=300mA
4.5 6.5 8.5
VCE(sat) Ic=300A
Tj=25oC
-
2.05 2.20
Collector-Emitter
(terminal) VGE=15V
Tj=125oC
-
2.25
-
saturation voltage
VCE(sat)
Tj=25oC
-
1.90 2.05
(chip)
Tj=125oC
-
2.10
-
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz -
34
-
ton Vcc=600V
- 0.32 1.20
Turn-on time
tr Ic=300A
- 0.10 0.60
tr(i) VGE=±15V
- 0.03
-
Turn-off time
toff RG=2.2Ω tf
- 0.41 1.00 - 0.07 0.30
VF
IF=300A
Tj=25oC
-
1.80 1.95
Forward on voltage
(terminal) VF
VGE=0V
Tj=125oC Tj=25oC
-
1.90 1.65 1.80
(chip)
Tj=125oC
-
1.75
-
Reverse recovery time
trr
IF=300A
- - 0.35
Lead resistance, terminal-chip (*5)
R lead
- 0.40
-
(*5) Biggest internal terminal resistance among arm.
Units mA nA V
V nF
us
V us mΩ
MS5F6163
4 13
H04-004-03a
5. Thermal resistance characteristics
It em s
Sym b o l s
Conditions
Characteristics min. typ. max.
Thermal resistance(1device) Rth(j-c)
IGBT FWD
- - 0.081 - - 0.14
Contact Thermal resistance (1 device) (*6)
Rth(c-f)
with Thermal Compound
- 0.0125 -
(*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Units oC/W
6. Indication on module Logo of production
Lot.No.
1M BI 300U4-120
300A 1200V
Place of manufacturing (code)
7. Applicable category This specification is applied to IGBT-Module named 1MBI300U4-120.
8. Storage and transportation notes • The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . • Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
• Avoid exposure to corrosive gases and dust. • Avoid excessive external force on the module. • Store modules with unprocessed terminals. • Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
L
RG V GE
V CE Ic
0V VGE
VCE V cc
0V Ic 0A
10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
~~ ~~ ~~
90%
tr r 9 0%
Ir r Ic
10% 10%
tr ( i ) tr to n
VCE
to f f
0V
9 0% 10%
tf
MS5F6163
5 13
H04-004-03a
11. Reliability test results
Reliability Test Items
Test categories
Test items
Test methods and conditions
Mechanical Tests
1 Terminal Strength (Pull test)
2 Mounting Strength
3 Vibration
4 Shock
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity Storage
4 Unsaturated Pressurized Vapor
5 Temperature Cycle
Pull force
: 40N
Test time
: 10±1 sec.
Screw torque
: 1.3 ~ 1.7 N・m (M4)
2.5 ~ 3.5 N・m (M5)
3.5 ~ 4.5 N・m (M6)
Test time
: 10±1 sec.
Range of frequency : 10 ~ 500Hz
Sweeping time
: 15 min.
Acceleration
: 100m/s2
Sweeping direction : Each X,Y,Z axis
Test time
: 6 hr. (2hr./direction)
Maximum acceleration : 5000m/s2
Pulse width
: 1.0msec.
Direction
: Each X,Y,Z axis
Test time
: 3 times/direction
Storage temp.
: 125±5 ℃
Test duration
: 1000hr.
Storage temp.
: -40±5 ℃
Test duration
: 1000hr.
Storage temp.
: 85±2 ℃
Relative humidity
: 85±5%
Test duration
: 1000hr.
Test temp.
: 120±2 ℃
Test humidity
: 85±5%
Test duration
: 96hr.
Test temp.
: Low temp. -40±5 ℃
Environment Tests
High temp. 125 ±5 ℃
6 Thermal Shock
Dwell time Number of cycles
RT 5 ~ 35 ℃ : High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.