Document
1MBI1200U4C-170
IGBT MODULE (U series) 1700V / 1200A / 1 in one package
IGBT Modules
Features
High speed switching Voltage drive Low Inductance module structure
Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Collector-Emitter voltage Gate-Emitter voltage
Symbols VCES VGES
Ic
Conditions Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
AC : 1min.
Mounting (*2)
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
Tc=25°C Tc=80°C Tc=25°C Tc=80°C
Maximum ratings 1700 ±20 1600 1200 3200 2400 1200 2400 7350 150
-40 to +125 3400 5.75 10 2.5
Units V V
A
W °C °C VAC
N·m
Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance Turn-on time Turn-off time
Forward on voltage
Reverse recovery time Lead resistance, terminal-chip (*3)
Symbols
Conditions
ICES VGE = 0V, VCE = 1700V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 1200mA
VCE (sat)
(main terminal) VGE = 15V
VCE (sat)
IC = 1200A
(chip)
Tj=25°C Tj=125°C Tj=25°C Tj=125°C
Cies
VGE = 0V, VCE = 10V, f = 1MHz
ton
tr toff
VCC = 900V, IC = 1200A VGE = ±15V, Tj = 125°C Rgon = 3.9Ω, Rgoff = 1.5Ω
tf
VF (main terminal) VGE = 0V VF IF = 1200A (chip)
Tj=25°C Tj=125°C Tj=25°C Tj=125°C
trr IF = 1200A
R lead
Characteristics min. typ. max.
- - 1.0 - - 2400 5.5 6.5 7.5 - 2.43 2.61 - 2.83 - 2.25 2.40 - 2.65 - 112 - 1.80 - 0.85 - 1.30 - 0.35 - 1.98 2.36 - 2.18 - 1.80 2.15 - 2.00 - 0.35 - 0.146 -
Units mA nA V
V
nF
µs
V
µs mΩ
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance (1device) Contact thermal resistance (1device)
Symbols
Rth(j-c) Rth(c-f)
Conditions
IGBT FWD with Thermal Compound (*4)
Characteristics min. typ. max.
- - 0.017 - - 0.030 - 0.006 -
Units °C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
1MBI1200U4C-170
Characteristics (Representative)
Collector current : Ic [A]
Collector current vs. Collector-Emitter voltage (typ.)
2800
Tj=25°C ,chip
2400
VGE=20V 15V 12V
2000 1600
10V
1200
800
400
0 0.0
8V
1.0 2.0 3.0 4.0 Collector-Emitter voltage : VCE [V]
5.0
Collector current : Ic [A]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,chip
2800
2400
Tj=25°C Tj.