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1MBI1200U4C-170 Dataheets PDF



Part Number 1MBI1200U4C-170
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 1MBI1200U4C-170 Datasheet1MBI1200U4C-170 Datasheet (PDF)

1MBI1200U4C-170 IGBT MODULE (U series) 1700V / 1200A / 1 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Conditions Con.

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1MBI1200U4C-170 IGBT MODULE (U series) 1700V / 1200A / 1 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Conditions Continuous Collector current Ic pulse 1ms -Ic -Ic pulse 1ms Collector power dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. Mounting (*2) Screw torque Main Terminals (*2) Sense Terminals (*2) Tc=25°C Tc=80°C Tc=25°C Tc=80°C Maximum ratings 1700 ±20 1600 1200 3200 2400 1200 2400 7350 150 -40 to +125 3400 5.75 10 2.5 Units V V A W °C °C VAC N·m Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*3) Symbols Conditions ICES VGE = 0V, VCE = 1700V IGES VCE = 0V, VGE = ±20V VGE (th) VCE = 20V, IC = 1200mA VCE (sat) (main terminal) VGE = 15V VCE (sat) IC = 1200A (chip) Tj=25°C Tj=125°C Tj=25°C Tj=125°C Cies VGE = 0V, VCE = 10V, f = 1MHz ton tr toff VCC = 900V, IC = 1200A VGE = ±15V, Tj = 125°C Rgon = 3.9Ω, Rgoff = 1.5Ω tf VF (main terminal) VGE = 0V VF IF = 1200A (chip) Tj=25°C Tj=125°C Tj=25°C Tj=125°C trr IF = 1200A R lead Characteristics min. typ. max. - - 1.0 - - 2400 5.5 6.5 7.5 - 2.43 2.61 - 2.83 - 2.25 2.40 - 2.65 - 112 - 1.80 - 0.85 - 1.30 - 0.35 - 1.98 2.36 - 2.18 - 1.80 2.15 - 2.00 - 0.35 - 0.146 - Units mA nA V V nF µs V µs mΩ Note *3: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) Symbols Rth(j-c) Rth(c-f) Conditions IGBT FWD with Thermal Compound (*4) Characteristics min. typ. max. - - 0.017 - - 0.030 - 0.006 - Units °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 1MBI1200U4C-170 Characteristics (Representative) Collector current : Ic [A] Collector current vs. Collector-Emitter voltage (typ.) 2800 Tj=25°C ,chip 2400 VGE=20V 15V 12V 2000 1600 10V 1200 800 400 0 0.0 8V 1.0 2.0 3.0 4.0 Collector-Emitter voltage : VCE [V] 5.0 Collector current : Ic [A] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,chip 2800 2400 Tj=25°C Tj.


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