MPS8050SC

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8550SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC * Tj 40 25 5 1,200 350 150 Storage Temperature Range Tstg -55 150 * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) UNIT V V V mA mW MPS8050SC EPITAXIAL PLANAR NPN TRANSISTOR A G D E L BL 23 1 M DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 1. EMITTER 2. BASE 3. COLLECTOR SOT-23(1) C N K J Marking CBKType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Note) : hFE Classification D:150~300 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (Note) VCE(sat) VBE(sat) fT TEST CONDITION IC=0.5mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCB=35V, IE=0 VEB=4V, IC=0 VCE=1V, IC=100mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=6V, IC=20mA, f=30MHz MIN. 40 25 5 150 150 TYP. - MAX. 0.1 0.1 300 0.5 1.2 - UNIT V V V uA uA V V MHz 2015. 9. 30 Revision No : 1 1/2 MPS8050SC 2015. 9. 30 Revision No...