TIP41CF

SEMICONDUCTOR TECHNICAL DATA TIP41CF EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Complementary to TIP42CF. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO Collector Current DC Pulse IC ICP Base Current IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING 100 100 5 6 10 2 2 25 150 -55 150 UNIT V V V A A W W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2 L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 N 2.54 +_ 0.1 P 6.8+_ 0.1 Q 4.5 +_ 0.2 R 2.6 +_0.2 HS 0.5 Typ 123 Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current VCEO(SUS) ICEO ICES IEBO DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter On Voltage Transition Frequency VCE(sat) VBE(on) fT TEST CONDITION IC=30mA, IB=0 VCE=60V, IB=0 VCE=100V, VEB=0 VEB=5V, IC=0 VCE=4V, IC=0.3A VCE=4V, IC=3A IC=6A, IB=600mA VCE=4V, IC=6A VCE=10V, IC=500mA MIN. 100 30 15 3.0 TYP. - MAX. 0.7 400 1 75 1.5 2.0 - UNIT V mA A mA V V MHz 2007. 5. 21 Revision No : 0 1/2 DC CURRENT GAIN hFE TIP41CF hFE - IC 1k VCE =4V 300 100...