KTA1660

J B EB SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING APPLICATION. FEATURES High Voltage : VCEO=-150V. High Transition Frequency : fT=120MHz(Typ.). 1W (Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTC4372. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -150 Collector-Emitter Voltage VCEO -150 Emitter-Base Voltage VEBO -5 Collector Current IC -50 Base Current IB -10 Collector Power Dissipation PC 500 PC* 1 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 PC* : KTA1660 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W KTA1660 EPITAXIAL PLANAR PNP TRANSISTOR AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking hFE Rank Lot No. Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO hFE (Note) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE Classification O:70 140, Y:120 240 TEST CONDITION VCB=-150V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-10mA IC=-10mA, IB=-1mA VCE=-5V, IC=-30mA VCE=-30V, IC=-10mA VCB=-10V, IE=0, f=1MHz MIN. 70 - TYP. - 120 4.0 MAX. -0.1 -0.1 240 -0.8 -0.9 5.0 UNIT A A V V MHz pF 1998...