SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS.
FEATURES Low Collector Saturati...
SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS.
FEATURES Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time : tstg=1.0 S(Typ.) Complementary to KTC3209.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC PC Tj
Storage Temperature Range
Tstg
RATING -50 -50 -5 -2 1 150
-55 150
UNIT V V V A W
O D
KTA1281
EPITAXIAL PLANAR
PNP TRANSISTOR
BD
G JA R
P DEPTH:0.2
C
Q K
FF
HH M EM
123
HL
NN 1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX J 14.00+_ 0.50
HK L
0.35 MIN 0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
ICBO IEBO V(BR)CEO hFE (1)(Note) hFE (2) VCE(sat) VBE(sat) fT Cob
TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A IC=-1A, IB=-0.05A IC=-1A, IB=-0.05A VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz
Turn-on Time
ton
Switching Time
Storage Time
tstg
Fall Time
tf
Note : hFE Clas...