KTA1279

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. KTA1279 EPITAXIAL PLANAR PNP TRANSISTOR BC JA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Tstg RATING -300 -300 -5.0 -500 500 625 150 -55 150 UNIT V V V mA mA mW L M C KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current V(BR)CBO V(BR)CEO DC Current Gain hFE * Collector-Emitter Saturation Voltage VCE(sat) * Base-Emitter Saturation Voltage VBE(sat) * Transition Frequency fT Collector Output Capacitance Cob Note :* Pulse test : PW 300 S, Duty Cycle 2% TEST CONDITION IC=-100 A, IE=0 IC=-1.0mA, IB=0 IC=-1.0mA, VCE=-10V IC=-10mA, VCE=-10V IC=-30mA, VCE=-10V IC=-20mA, IB=-2.0mA IC=-20mA, IB=-2.0mA VCE=-20V, IC=-10mA, f=100MHz VCB=-20V, IE=0, f=1MHz MIN. -300 -300 25 40 25 50 - TYP. - MAX. - -0.5 -0.9 6.0 UNIT V V V V MHz pF 2005. 8. 30 Revision No : 1 1/2 KTA1279 DC CURRENT GAIN hFE h FE - I C 300 VCE =10VDC T j =125 C 100 T j =25 C 50 T j =-55 C 30 10 -1 -3 -5 -10 -30 -50 -100 COLLECTOR CURRENT IC (mA) Cob - V R 100 ...