Document
SEMICONDUCTOR
TECHNICAL DATA
KTA1045D/L
EPITAXIAL PLANAR PNP TRANSISTOR
LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTC2025D/L
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
VCBO VCEO VEBO
IC ICP
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature Storage Temperature Range
Tj Tstg
RATING -120 -120 -5 -1 -2 1.0 8 150
-55 150
UNIT V V V
A
W
Q
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K
E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_ 0.2 1.10+_ 0.2 2.70+_ 0.2 2.30 +_ 0.1
1.00 MAX 2.30 +_ 0.2 0.5 +_ 0.1 2.00 +_ 0.20 0.50 +_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00 +_ 0.10
0.95 MAX
DPAK
Q
AI CJ
BD
H G
FF
123
1. BASE 2. COLLECTOR 3. EMITTER
K E
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0 +_ 0.2
P
D 1.10+_ 0.2 E 9.50 +_ 0.6
F 2.30 +_ 0.1
G 0.76 +_ 0.1
H 1.0 MAX
I 2.30 +_ 0.2 J 0.5 +_ 0.1 L K 2.0 +_ 0.2 L 0.50 +_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) Note hFE(2) fT Cob VCE(sat) VBE(sat)
Turn-on Time
ton
Switching Time
Turn-off Time
toff
TEST CONDITION VCB=-50V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-5V, IC=-50mA VCE=-5V, IC=-500mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA
I B2 IB1
1Ω
20µsec 100Ω
24Ω
1uF 1uF
Storage Time
tstg
(Note) : hFE(1) Classification Y:100 200, GR:160 320
2V -12V VCE =-12V IC =10I B1 =-10IB2 =500mA
IPAK
MIN. -
-120 -120 -5 100 20
-
TYP. -
110 30 -0.15 -0.85
- 80
MAX. -1 -1 320 -0.4 -1.2
-
UNIT A A V V V
MHz pF V V
- 100 -
nS
- 600 -
2003. 3. 27
Revision No : 5
1/2
KTA1045D/L
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
VCE - IC
-1.6 Tc=25 C
-1.4
-1.2
-20 -15
-1.0 -12 -10
-0.8 -8
-0.6 -6 -4
-0.4
-0.2 -2 IB =0mA
0 0 -1 -2 -3 -4 -5 -6
COLLECTOR-EMITTER VOLTAGE VCE (V)
VBE - I C
-1.4 VCE =-5V
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0 0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE VBE (V)
C ob - VCB
200 f=1MHz
100
-1.2
50 30
OUTPUT CAPACITANCE Cob (pF)
DC CURRENT GAIN hFE
10
5 5 -1
-3 -10
-30 -100
COLLECTOR-BASE VOLTAGE V CE (V)
500 VCE =-5V
300
h FE - I C
100
50 30
10 -1 -3 -10 -30 -100 -300 -1k
COLLECTOR CURRENT I C (mA)
-5k
2003. 3. 27
Revision No : 5
COLLECTOR CURRENT IC (A)
COLLECTOR DISSIPATION PC (W)
COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V)
-1.0 IC /I B=10 -0.5 -0.3
VCE(sat) - I C
-0.1
-0.05 -0.03
-0.01 -1
-3 -10 -30 -100 -300 -1k COLLECTOR CURRENT IC (mA)
-3k
10 81
Pc - Ta
1 Tc=25 C 2 Ta=25 C
6
4
2
2
0 0 20 40 60 80 100 120 140 160
AMBIENT TMMPERATURE Ta ( C)
SAFE OPERATING AREA
5 3 IC MAX.(PULSED) *
1
0.5 0.3
IC
MAX.
(CONTINUOUS) DTCc=O2P5ECRATION101mmS1S*0*0µS*
0.1
0.05 * SINGLE NONREPETITIVE 0.03 PULSE Tc=25 C
CURVES MUST BE DERATED
0.01 0.005
LINEARLY WITH INCREASE IN TEMPERATURE
1 10
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2
.