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KTA1038 Dataheets PDF



Part Number KTA1038
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet KTA1038 DatasheetKTA1038 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌHigh Breakdown Voltage : VCEO=-100V. ᴌLow Collector-Emitter Saturation Voltage. : VCE(sat)=-2.0V(Max.) ᴌComplementary to KTC2018. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE IB PC Tj Tstg RATING -100 -1.

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌHigh Breakdown Voltage : VCEO=-100V. ᴌLow Collector-Emitter Saturation Voltage. : VCE(sat)=-2.0V(Max.) ᴌComplementary to KTC2018. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE IB PC Tj Tstg RATING -100 -100 -5 -5 5 -0.5 40 150 -55ᴕ150 UNIT V V V A A A W ᴱ ᴱ H E Q KTA1038 EPITAXIAL PLANAR PNP TRANSISTOR A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER O NG P DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 Φ3.60 +_ 0.20 3.00 6.70 MAX 13.60+_ 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 9.50+_ 0.20 8.00+_ 0.20 2.90 MAX TO-220AB ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-BaseBreakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO V(BR)EBO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE(1) Classification O:70ᴕ140 , Y:120ᴕ240 TEST CONDITION VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-50mA, IB=0 IE=-10mA, IC=0 VCE=-5V, IC=-1A VCE=-5V, IC=-4A IC=-4A, IB=-0.4A VCE=-5V, IC=-4A VCE=-5V, IC=-1A VCB=-10V, IE=0, f=1MHz MIN. - -100 -5.0 70 20 - TYP. 30 90 MAX. -100 -1.0 240 -2.0 -1.5 - UNIT ỌA mA V V V V MHz pF 1998. 12. 31 Revision No : 1 1/2 COLLECTOR CURRENT I C (A) -250 -200 KTA1038 I C - VCE -5 -150 -4 -100 -3 -50 -2 IB =-20mA -1 COMMON EMITTER Tc =25 C 0 0 0 -1 -2 -3 -4 -5 -6 -7 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 50 Tc =Ta 40 INFINITE HEAT SINK 30 20 10 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) DC CURRENT GAIN h FE hFE - I C 500 300 Tc=75 C Tc=25 C 100 Tc=-25 C 50 30 COMMON EMITTER VCE =-5V 10 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT IC (A) -10 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) -2 COMMON EMITTER -1 IC/IB =10 -0.5 -0.3 VCE(sat) - I C -0.1 -0.05 -0.03 -0.01 -0.03 Tc =75 C Tc=25 C Tc=-25 C -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) -10 2001. Revision No : 1 COLLECTOR CURRENT I C (A) SAFE OPERATING AREA -20 1s -10 I C MAX(PULSED) I C MAX -5 (CONTINUOUS) -3 D(TCc=O2P5ERCA) TION -1 SINGLE -0.5 NONREPETITIVE PULSE -0.3 Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.1 -2 -10 -30 1ms 10ms 100ms -100 VCEO MAX -300 COLLECTOR-EMITTER VOLTAGE VCE (V) 2/2 .


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