SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION.
FEATURES ᴌhFE=100ᴕ320 (VCE=-2V, IC=-0.5...
SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION.
FEATURES ᴌhFE=100ᴕ320 (VCE=-2V, IC=-0.5A). ᴌhFE=70(Min.) (VCE=-2V, IC=-4A). ᴌLow Collector Saturation Voltage.
: VCE(sat)=-0.5V (IC=-3A, IB=-75mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING -35 -20 -8 -5 -0.5 625 150
-55ᴕ150
UNIT V V V A A mW ᴱ ᴱ
L M
C
KTA1243
EPITAXIAL PLANAR
PNP TRANSISTOR
BC
JA
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency
ICBO IEBO V(BR)CEO V(BR)EBO hFE(1) (Note) hFE(2) VCE(sat) VBE fT
Collector Output Capacitance
Cob
Note : hFE(1) Classification O:100ᴕ200, Y:160ᴕ320
TEST CONDITION VCB=-35V, IE=0 VEB=-8V, IC=0 VEB=-10mA, IB=0 IE=-1mA, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-4A IC=-3A, IB=-75mA VCE=-2V, IC=-4A VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz
MIN. -
-20 -8 100 70 -
TYP. -
170 62
MAX. -100 -100
320 -0.5 -1.5 -
UNIT nA nA...