KTA1272

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES ᴌHigh hFE : hFE=100ᴕ320. ᴌComplementary to KTC3204. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING -35 -30 -5 -800 800 400 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ J K D KTA1272 EPITAXIAL PLANAR PNP TRANSISTOR B F A HM C EE 1 2 3N L 1. EMITTER 2. COLLECTOR 3. BASE G O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27 F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75 TO-92M ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification 0:100ᴕ200, ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob Y:160ᴕ320 TEST CONDITION VCB=-30V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-700mA IC=-500mA, IB=-20mA VCE=-1V, IC=-10mA VCE=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz MIN. - -30 100 35 -0.5 - TYP. - 120 19 MAX. -100 -100 320 -0.7 -0.8 - UNIT nA nA V V V MHz pF 1994. 3. 24 Revision No : 0 1/1 ...