KTA2012E

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. FEATURES ᴌA Collector Current is Large. ᴌCollector Saturation Voltage is low. : VCE(sat)ᴪ-250mV at IC=-200mA/IB=-10mA. ᴌComplementary to KTC4072E. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS. SYMBOL VCBO VCEO VEBO IC ICP * PC Tj Tstg RATING -15 -12 -6 -500 -1 100 150 -55ᴕ150 UNIT V V V mA A mW ᴱ ᴱ A G H KTA2012E EPITAXIAL PLANAR PNP TRANSISTOR C E B DIM MILLIMETERS 2 D A 1.60+_ 0.10 B 0.85+_ 0.10 13 C 0.70+_ 0.10 D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10 H 0.50 J 0.13+_ 0.05 J 1. EMITTER 2. BASE 3. COLLECTOR ESM Marking Type Name SZ ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) fT Collector Output Capacitance Cob TEST CONDITION VCB=-15V, IE=0 IC=-10ỌA IC=-1mA IE=-10ỌA VCE=-2V, IC=-10mA IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA, fT=100MHz VCB=-10V, IE=0, f=1MHz MIN. - -15 -12 -6 270 - TYP. - -100 260 6.5 MAX. -100 680 -250 - UNIT nA V V V mV MHz pF 2002. 2. 20 Revision No : 1 1/3 DC CURRENT GAIN h FE KTA2012E hFE - I C 1K Ta=125 C 500 Ta=25 C 300 Ta=-40 C ...