MTN10N65EA

CYStech Electronics Corp. Spec. No. : C725EA Issued Date : 2010.02.25 Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN10N65EA BVDSS : 700V @Tj=150℃ RDS(ON) : 0.85Ω ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-82 package is universally preferred for all commercial-industrial applications Features BVDSS=700V typically @ Tj=150℃ Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Power Factor Correction LCD TV Power Full and Half Bridge Power Symbol MTN10N65EA Outline SOT-82 G：Gate D：Drain S：Source MTN10N65EA G DS Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C725EA Issued Date : 2010.02.25 Revised Date : 2010.12.29 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=4.3mH, ID=10 Amps, VDD=50V Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Deratin...