N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C126E3 Issued Date : 2015.12.25 Revised Date : Page No. : 1/ 10
N-Channel Enhanc...
Description
CYStech Electronics Corp.
Spec. No. : C126E3 Issued Date : 2015.12.25 Revised Date : Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTN10N60BE3 BVDSS ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=6A
600V 10A 0.59Ω
Description
The MTN10N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package
Applications
Power Factor Correction LCD TV Power Full and Half Bridge Power
Ordering Information
Device MTN10N60BE3-0-UB-X
Package
TO-220 (RoHS compliant package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products Product name
MTN10N60BE3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C126E3 Issued Date : 2015.12.25 Revised Date : Page No. : 2/ 10
Symbol
MTN10N60BE3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain...
Similar Datasheet