24NM65N

STW24NM65N-STI24NM65N-STF24NM65N STB24NM65N - STP24NM65N N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET Features Type STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 19 A 19 A 19 A(1) 19 A 19 A 1. Limited only by maximum temperature allowed ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220 3 2 1 TO-220FP 3 1 D²PAK 123 I²PAK 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order codes STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N Marking 24NM65N 24NM65N 24NM65N 24NM65N 24NM65N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube February 2008 Rev 1 1/19 www.st.com 19 Contents Contents STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . ....