P-Channel Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 1/8
-30V P-...
Description
CYStech Electronics Corp.
Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 1/8
-30V P-CHANNEL Enhancement Mode MOSFET
MTP4411M3
BVDSS
ID
RDSON@VGS=-10V, ID=-4A
RDSON@VGS=-4.5V, ID=-3A
-30V
-5A 40mΩ (typ.) 58mΩ (typ.)
Features
Single Drive Requirement Ultra High Speed Switching Pb-free lead plating package
Symbol
MTP4411M3
Outline
SOT-89
G:Gate S:Source D:Drain
G DD S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃)
ID -5 ID -4 IDM -20 *1, 3 Pd 1.5 *2
Linear Derating Factor
0.01
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board; 250 °C/W when mounted on min. copper pad *3. Pulse width≤300μs, duty cycle≤2%
Unit
V V A A A W W/°C °C
MTP4411M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 2/8
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-case, max
Rth,j-c
17
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
83.3 (Note)
Note : When mounted on a 1 in2 pad of 2 oz. copper; 250 °C/W when mounted on min. copper pad
Unit °C/W °C/W
Electrical Characteristics (Tj=25°C, unless o...
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