MTN9971J3

CYStech Electronics Corp. Spec. No. : C415J3 Issued Date : 2008.08.14 Revised Date : 2009.02.04 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET MTN9971J3 BVDSS ID RDSON 60V 25A 36 mΩ Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol MTN9971J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : *1. Pulse width limited by safe operating area Symbol VDS VGS ID ID IDM Pd Tj, Tstg Limits 60 ±20 25 16 80 *1 39 0.31 -55~+150 Unit V V A A A W W/°C °C MTN9971J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C415J3 Issued Date : 2008.08.14 Revised Date : 2009.02.04 Page No. : 2/7 Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 3.2 110 Unit °C/W °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS IDSS *RDS(ON) *RDS(ON) 60 1.0 - - - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss - Source-Drain Diode *VSD - *trr - *Qrr - 0.05 17 - 18 6 11 9 24 26 7 ...