MTN4N65BI3

CYStech Electronics Corp. Spec. No. : C990I3 Issued Date : 2016.05.26 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN4N65BI3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=2A 650V 4A 2.4A 2Ω(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free Lead Plating and Halogen-free Package Symbol MTN4N65BI3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device MTN4N65BI3-0-UA-G Package TO-251 (RoHS compliant and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTN4N65BI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C990I3 Issued Date : 2016.05.26 Revised Date : Page No. : 2/10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain ...