MTN3N65FP

CYStech Electronics Corp. Spec. No. : C798FP Issued Date : 2010.03.12 Revised Date : 2011.03.30 Page No. : 1/ 11 N-Channel Enhancement Mode Power MOSFET MTN3N65FP BVDSS : 650V RDS(ON) : 3.6Ω (typ.) ID : 3A Description The MTN3N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Insulating package, front/back side insulating voltage=2500V(AC) RoHS compliant package Applications Adapter Switching Mode Power Supply Symbol MTN3N65FP Outline TO-220FP G：Gate D：Drain S：Source MTN3N65FP GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C798FP Issued Date : 2010.03.12 Revised Date : 2011.03.30 Page No. : 2/ 11 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain curr...