MTN2342N3

CYStech Electronics Corp. Spec. No. : C710N3 Issued Date : 2013.12.18 Revised Date : Page No. : 1/ 9 16V N-Channel Enhancement Mode MOSFET MTN2342N3 BVDSS ID @VGS=4.5V VGS=4.5V, ID=7.2A VGS=2.5V, ID=6.7A RDSON(TYP) VGS=1.8V, ID=6.4A Features Low on-resistance VGS=1.5V, ID=5.5A VGS=1.2V, ID=1.3A Low voltage gate drive, 1.2V to 5V Excellent thermal and electrical capabilities Pb-free lead plating and halogen-free package 16V 6A 15.4mΩ 17.2mΩ 19.8mΩ 22.5mΩ 26.7mΩ Equivalent Circuit MTN2342N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTN2342N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN2342N3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=4.5V, TA=25°C Continuous Drain Current @ VGS=4.5V, TA=70°C Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature (Note 3) (Note 3) Symbol VDS VGS ID IDM PD Tj, Tstg Spec. No. : C710N3 Issued Date : 2013.12.18 Revised Date : Page No. : 2/ 9 Limits 16 ±5 6 4.8 30 1.25 0.8 -55~+150 Unit V A W °C Thermal Performance ...