Document
CYStech Electronics Corp.
Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 1/ 8
100V N-Channel Enhancement Mode MOSFET
MTN2328N3
Features
• VDS=100V RDS(ON)(typ)=125mΩ@VGS=10V, ID=1.5A
• Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package
BVDSS ID RDSON(TYP)
100V 1.9A 125mΩ
Equivalent Circuit
MTN2328N3
Outline
SOT-23 D
G:Gate S:Source D:Drain
GS
Ordering Information
Device MTN2328N3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
MTN2328N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 2/ 8
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃
Linear Derating Factor
Thermal Resistance, Junction-to-Ambient (Note 3) Operating Junction and Storage Temperature
Symbol
VDS VGS ID ID IDM
PD
Rth,ja Tj, Tstg
Limits 100 ±20 1.9 1.5 10 1.38
0.01
90 -55~+150
Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad.
Unit V V A A A W
W/°C
°C/W °C
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static BVDSS VGS(th) GFS IGSS
IDSS
*RDS(ON)
Dynamic Ciss Coss Crss *td(ON) *tr
*td(OFF) *tf *Qg
*Qgs *Qgd
Source-Drain Diode *VSD
Min.
100 1 -
-
-
Typ.
1.9 4 125
1188 30 20 12 9.6 29 5 14 4 2.3
0.75
Max.
2.5 ±100 1 10 180
-
1.2
Unit Test Conditions
V
VGS=0, ID=250μA VDS=VGS, ID=250μA
S VDS=15V, ID=1.5A
nA VGS=±20V, VDS=0
μA
VDS=80V, VGS=0 VDS=80V, VGS=0, Tj=55°C
mΩ VGS=10V, ID=1.5A
pF VDS=25V, VGS=0, f=1MHz
ns VDS=50V, ID=1A, VGS=10V, RG=6Ω
nC VDS=80V, ID=1.9A, VGS=5V
V VGS=0V, IS=1A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN2328N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 3/ 8
Typical Characteristics
ID, Drain Current(A)
10 9 8 7 6 5 4 3 2 1 0 0
Typical Output Characteristics
10V,8V,7V,6V,4.5V,4V,3.5V
VGS=3V
1 23 4 VDS, Drain-Source Voltage(V)
5
BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Ambient Temperature 1.4
1.2
1
0.8
0.6 ID=250μA, VGS=0V
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
RDS(ON), Static Drain-Source On-State Resistance(mΩ)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=2.5V
VGS=3V
100 0.001
VGS=4.5V
VGS=10V
0.01 0.1
1
10
ID, Drain Current(A)
100
VSD, Source-Drain Voltage(V)
Reverse Drain Current vs Source-Drain Voltage 1.2
1 Tj=25°C
0.8 Tj=150°C
0.6
0.4
0.2 0
4 8 12 16 IDR, Reverse Drain Current(A)
20
RDS(ON), Static Drain-Source OnState Resistance(mΩ)
Static Drain-Source On-State Resistance vs Gate-Source Voltage
200
190 180 ID=1.5A
170
160
150
140
130
120
110
100 0
24 68 VGS, Gate-Source Voltage(V)
10
RDS(ON), Normalized Static DrainSource On-State Resistance
Drain-Source On-State Resistance vs Junction Tempearture 2.4
VGS=10V, ID=1.5A 2
1.6
1.2
0.8
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
MTN2328N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 4/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture 1.4
ID=250μA 1.2
1
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
100
10 0.1
C oss
Crss
1 10 VDS, Drain-Source Voltage(V)
100
0.8
0.6
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
Forward Transfer Admittance vs Drain Current 10
1
Gate Charge Characteristics 10
VDS=80V ID=1.5A 8
6
0.1
0.01 0.001
VDS=10V Pulsed Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
10
4
2
0 0 4 8 12 16 Qg, Total Gate Charge(nC)
Maximum Safe Operating Area 100
Maximum Drain Current vs Junction Temperature 2.5
ID, Maximum Drain Current(A)
ID, Drain Current(A)
10 RDS(ON) Limit
1
100μs 1ms
10ms 0.1
TA=25°C, Tj=150°, VGS=10V RθJA=90°C/W, Single Pulse
0.01
100m DC
0.1 1 10 100 VDS, Drain-Source Voltage(V)
1000
2
1.5
1
0.5 TA=25°C, VGS=10V, RθJA=90°C/W
0 25 50 75 100 125 150 Tj, Junction Temperature(°C)
175
MTN2328N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 5/ 8
Typi.