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MTN2328N3 Dataheets PDF



Part Number MTN2328N3
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode MOSFET
Datasheet MTN2328N3 DatasheetMTN2328N3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 1/ 8 100V N-Channel Enhancement Mode MOSFET MTN2328N3 Features • VDS=100V RDS(ON)(typ)=125mΩ@VGS=10V, ID=1.5A • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) 100V 1.9A 125mΩ Equivalent Circuit MTN2328N3 Outline SOT-23 D G:Gate S:Source D:Drain GS Ordering Information Device MT.

  MTN2328N3   MTN2328N3


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CYStech Electronics Corp. Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 1/ 8 100V N-Channel Enhancement Mode MOSFET MTN2328N3 Features • VDS=100V RDS(ON)(typ)=125mΩ@VGS=10V, ID=1.5A • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) 100V 1.9A 125mΩ Equivalent Circuit MTN2328N3 Outline SOT-23 D G:Gate S:Source D:Drain GS Ordering Information Device MTN2328N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN2328N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 2/ 8 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃ Linear Derating Factor Thermal Resistance, Junction-to-Ambient (Note 3) Operating Junction and Storage Temperature Symbol VDS VGS ID ID IDM PD Rth,ja Tj, Tstg Limits 100 ±20 1.9 1.5 10 1.38 0.01 90 -55~+150 Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad. Unit V V A A A W W/°C °C/W °C Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD Min. 100 1 - - - Typ. 1.9 4 125 1188 30 20 12 9.6 29 5 14 4 2.3 0.75 Max. 2.5 ±100 1 10 180 - 1.2 Unit Test Conditions V VGS=0, ID=250μA VDS=VGS, ID=250μA S VDS=15V, ID=1.5A nA VGS=±20V, VDS=0 μA VDS=80V, VGS=0 VDS=80V, VGS=0, Tj=55°C mΩ VGS=10V, ID=1.5A pF VDS=25V, VGS=0, f=1MHz ns VDS=50V, ID=1A, VGS=10V, RG=6Ω nC VDS=80V, ID=1.9A, VGS=5V V VGS=0V, IS=1A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN2328N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 3/ 8 Typical Characteristics ID, Drain Current(A) 10 9 8 7 6 5 4 3 2 1 0 0 Typical Output Characteristics 10V,8V,7V,6V,4.5V,4V,3.5V VGS=3V 1 23 4 VDS, Drain-Source Voltage(V) 5 BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Ambient Temperature 1.4 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Static Drain-Source On-State Resistance(mΩ) 1000 Static Drain-Source On-State resistance vs Drain Current VGS=2.5V VGS=3V 100 0.001 VGS=4.5V VGS=10V 0.01 0.1 1 10 ID, Drain Current(A) 100 VSD, Source-Drain Voltage(V) Reverse Drain Current vs Source-Drain Voltage 1.2 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 0 4 8 12 16 IDR, Reverse Drain Current(A) 20 RDS(ON), Static Drain-Source OnState Resistance(mΩ) Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 190 180 ID=1.5A 170 160 150 140 130 120 110 100 0 24 68 VGS, Gate-Source Voltage(V) 10 RDS(ON), Normalized Static DrainSource On-State Resistance Drain-Source On-State Resistance vs Junction Tempearture 2.4 VGS=10V, ID=1.5A 2 1.6 1.2 0.8 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) MTN2328N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 4/ 8 Typical Characteristics(Cont.) 10000 Capacitance vs Drain-to-Source Voltage 1000 Ciss Threshold Voltage vs Junction Tempearture 1.4 ID=250μA 1.2 1 VGS(th), Normalized Threshold Voltage Capacitance---(pF) 100 10 0.1 C oss Crss 1 10 VDS, Drain-Source Voltage(V) 100 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) Forward Transfer Admittance vs Drain Current 10 1 Gate Charge Characteristics 10 VDS=80V ID=1.5A 8 6 0.1 0.01 0.001 VDS=10V Pulsed Ta=25°C 0.01 0.1 1 ID, Drain Current(A) 10 4 2 0 0 4 8 12 16 Qg, Total Gate Charge(nC) Maximum Safe Operating Area 100 Maximum Drain Current vs Junction Temperature 2.5 ID, Maximum Drain Current(A) ID, Drain Current(A) 10 RDS(ON) Limit 1 100μs 1ms 10ms 0.1 TA=25°C, Tj=150°, VGS=10V RθJA=90°C/W, Single Pulse 0.01 100m DC 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 2 1.5 1 0.5 TA=25°C, VGS=10V, RθJA=90°C/W 0 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 MTN2328N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C583N3 Issued Date : 2011.05.18 Revised Date : 2013.11.22 Page No. : 5/ 8 Typi.


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