N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 1/9
N-Chann...
Description
CYStech Electronics Corp.
Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTN2310V8
BVDSS ID
RDSON(TYP)
VGS=10V, ID=3A VGS=4.5V, ID=2A
60V 14A 31mΩ 35mΩ
Description
The MTN2310V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating and halogen-free package
Equivalent Circuit
MTN2310V8
Outline
Pin 1
DFN3×3
G:Gate D:Drain S:Source
Ordering Information
Device MTN2310V8-0-T1-G
Package
DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
MTN2310V8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
TC=25℃ TA=25℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM PD Tj, Tstg
Spec. No. : C393V8 Issued Date : 2013.06.13 Revised Date : 2013.06.24 Page No. : 2/9
Limits
60 ±20 14
9 6 4.8 30 *1 14 2.3 ...
Similar Datasheet