MTN2310AN3

CYStech Electronics Corp. Spec. No. : C109N3 Issued Date : 2015.07.31 Revised Date : Page No. : 1/9 60V N-Channel Enhancement Mode MOSFET MTN2310AN3 BVDSS ID@VGS=10V, TA=25°C RDSON@VGS=10V, ID=4A RDSON@VGS=5V, ID=3A 60V 4.2A 33.7mΩ(typ) 43.1mΩ(typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol MTN2310AN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTN2310AN3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN2310AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C109N3 Issued Date : 2015.07.31 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=10V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits 60 ±20 4.2 3.4 16 1.38 0.01 -55~+150 Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pa...