MTN2306AM3

CYStech Electronics Corp. Spec. No. : C414M3 Issued Date : 2012.03.29 Revised Date : 2014.07.01 Page No. : 1/8 N-CHANNEL MOSFET MTN2306AM3 BVDSS ID RDSON@VGS=10V, ID=5.8A RDSON@VGS=4.5V, ID=5A 30V 6.8A 25mΩ(typ) 27mΩ(typ) Features Low on-resistance High speed switching Low-voltage drive Easily designed drive circuits Pb-free lead plating and halogen-free package Symbol MTN2306AM3 Outline SOT-89 G：Gate S：Source D：Drain GD D S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=100°C Pulsed Drain Current Total Power Dissipation Operating Junction and Storage Temperature Range Symbol VDSS VGSS ID ID IDM PD Tj; Tstg Limits 30 ±12 6.8 4.3 30 *1 2 *2 -55~+150 Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper, t≤10s. Unit V V A A A W °C Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient Symbol Rth,ja Note : Surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper, t≤10s. Limit 62.5 Unit °C/W MTN2306AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C414M3 Issued Date : 2012.03.29 Revised Date : 2014.07.01 Page No. : 2/8 Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Static BVDSS* VGS(th) IGSS IDSS RDS(ON)* GFS 30 0.5 - - Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd - So...