MTN13N50E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN13N50E3 Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 1/8 BVDSS : 500V RDS(ON) : 0.48Ω ID : 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150℃ Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Power Factor Correction LCD TV Power Full and Half Bridge Power Symbol MTN13N50E3 Outline TO-220 G：Gate D：Drain S：Source MTN13N50E3 GDS CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Drain-Source Voltage (Note 1) VDS Gate-Source Voltage VGS Continuous Drain Current ID Continuous Drain Current @TC=100°C ID Pulsed Drain Current @ VGS=10V (Note 2) IDM Single Pulse Avalanche Energy @ L=7.2mH, ID=12.2 Amps EAS Avalanche Current (Note 2) IAR Peak Diode Recovery dv/dt (Note 3) dv/dt Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds TL Maximum Temperature for Soldering @ Package Body for 10 seconds TPKG Total Power Dissipation (TC=25℃) Pd Linear Derating Factor Operating Junction and Storage Temperature Tj...