N-Channel MOSFET
CYStech Electronics Corp.
N-CHANNEL MOSFET
MTN138ZN3
Spec. No. : C320N3 Issued Date : 2007.12.23 Revised Date :2012.03....
Description
CYStech Electronics Corp.
N-CHANNEL MOSFET
MTN138ZN3
Spec. No. : C320N3 Issued Date : 2007.12.23 Revised Date :2012.03.27 Page No. : 1/7
Description
The MTN138ZN3 is a N-channel enhancement-mode MOSFET.
Features
Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free package
Symbol
MTN138ZN3 D
G
G:Gate S S:Source
D:Drain
Outline
SOT-23 D
GS
MTN138ZN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320N3 Issued Date : 2007.12.23 Revised Date :2012.03.27 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Drain Reverse Current
Continuous Pulsed
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
Symbol VDSS
VGSS ID IDP IDR IDRP PD
TCH Tstg
Limits
60
±20
200 800 200 800 200 1550 +150
-55~+150
*1
*1 *2 *3
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
*3. Human body model, 1.5kΩ in series with 100pF
Unit
V
V
mA mA mA mA mW V
°C °C
Electrical Characteristics (Ta=25°C)
Symbol
Min. Typ. Max.
BVDSS*
60
-
-
VGS(th)
1 1.2 2
IGSS - - ±10
IDSS - - 1
- 3.2 5
- 3.2 5
RDS(ON)*
-
2
4
- 24
- 1.5 3
GFS
100 240
-
Ciss - 30.6 -
Coss - 5.5 -
Crss - 4 -
Unit Test Conditions V VGS=0, ID=10μA V VDS=VGS, ID=250μA μA VGS=±20V, VDS=0 μA VDS=6...
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