isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC5772
DESCRIPTION ·High Gain Bandwidth Product
fT = 9 GHz TYP. ...
isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC5772
DESCRIPTION ·High Gain Bandwidth Product
fT = 9 GHz TYP. ·High power gain and low noise figure ;
PG = 13 dB TYP., NF = 1.1 dB typ. @ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in UHF ~ VHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15
V
VCEO Collector-Emitter Voltage
9
V
VEBO
Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
75
mA
0.7
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC5772
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
15
V
ICBO
Collector Cutoff Current
VCB= 12V; IE= 0
1
μA
ICEO
Collector Cutoff Current
VCE= 9V; RBE= ∞
1
mA
IEBO
Emitter Cutoff Current
VEB= 1.5V; IC= 0
10 μA
hFE
DC Current Gain
IC= 20mA ; VCE= 5V
80
160
fT
Current-Gain—Bandwidth Product
IC= 20mA ; VCE= 5V ;f= 1 GHz
6
9
GHz
COB
Output Capacitance
IE= 0 ; VCB= 5V;f= 1.0MHz
0.9 1.5 pF
Cre
Reverse Transfer Capacitance
IE= 0 ; VCB= 5V;f= 1.0MHz
0.7
pF
︱S21e︱2 Insertion Power Gain
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