2SA505

isc Silicon PNP Power Transistor 2SA505 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A IE Emitter Current-Continuous 1 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -2V ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -5; IC= 0 hFE-1 DC Current Gain IC= -50mA; VCE= -2V hFE-2 DC Current Gain IC= -800mA; VCE= -2V  hFE-1 Classifications R O Y 40-80 70-140 120-240 2SA505 MIN TYP. MAX UNIT -50 V -5 V -0.8 V -1.3 V -1.0 μA -1.0 μA 40 240 13 NOTICE： I...