2N6379

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N6379 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Power Dissipation APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCE0 Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -50 A IB Base Current-Continuous -20 A PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature 250 W -65~200 ℃ -65~200 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N6379 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)1★ Collector-Emitter Saturation Voltage IC= -20A; IB= -2A VCE(sat)2★ Collector-Emitter Saturation Voltage IC= -50A; IB= -10A VBE(sat)1★ Base-Emitter Saturation Voltage IC= -20A; IB= -2A VBE(sat)1★ Base-Emitter Saturation Voltage IC= -50A; IB= -10A IEBO Collector Cutoff Current VEB= -6V; IE= 0 hFE1★ DC Current Gain IC= -1A; VCE= -4V hFE2★ DC Current Gain IC= -20A; VCE= -4V hFE3★ DC Current Gain IC= -50A; VCE= -4V ★:Pulse Test:Pulse Width=300us,Duty Cycle=2.0% MIN TYP. MAX UNIT -1.2 V -3.0 V -1.8 V -3.5 V -0.1 mA 50 30 120 10 isc website：www.iscsemi.cn 2 isc ...